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1

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

Oto, Takao, Banal, Ryan G., Kataoka, Ken, Funato, Mitsuru, Kawakami, Yoichi

Journal:

Nature Photonics

Year:

2010

Language:

english

File:

PDF, 581 KB

english, 2010

2

Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 362 KB

english, 2009

3

Morphology and preferred orientation of Y2O3 film prepared by high-speed laser CVD

Takashi Goto, Ryan Banal, Teiichi Kimura

Journal:

Surface and Coatings Technology

Year:

2007

Language:

english

File:

PDF, 693 KB

english, 2007

4

Surface diffusion during metalorganic vapor phase epitaxy of AlN

Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 381 KB

english, 2009

5

Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy

Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 374 KB

english, 2010

6

Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells

Takao Oto, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 298 KB

english, 2010

7

Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation

Yoshiya Iwata, Takao Oto, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

8

N/AlN quantum wells

Funato, Mitsuru, Matsuda, Kazuhisa, Banal, Ryan G., Ishii, Ryota, Kawakami, Yoichi

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 440 KB

english, 2013

9

Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

Banal, Ryan G., Taniyasu, Yoshitaka, Yamamoto, Hideki

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 876 KB

english, 2014

10

Optical gain characteristics in Al-rich AlGaN/AlN quantum wells

Oto, Takao, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.26 MB

english, 2014

11

Heteroepitaxy between wurtzite and corundum materials

Hayashi, Yuki, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 4.31 MB

english, 2013

12

Crack-Free Thick AlN Films Obtained by NH 3 Nitridation of Sapphire Substrates

Banal, Ryan G., Akashi, Yosuke, Matsuda, Kazuhisa, Hayashi, Yuki, Funato, Mitsuru, Kawakami, Yoichi

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 677 KB

english, 2013

13

Homoepitaxy and Photoluminescence Properties of (0001) AlN

Funato, Mitsuru, Matsuda, Kazuhisa, Banal, Ryan G., Ishii, Ryota, Kawakami, Yoichi

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 585 KB

english, 2012

14

Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

Iwata, Yoshiya, Banal, Ryan G., Ichikawa, Shuhei, Funato, Mitsuru, Kawakami, Yoichi

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.50 MB

english, 2015

15

Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells

Iwata, Yoshiya, Oto, Takao, Gachet, David, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.19 MB

english, 2015

16

Nanometer-thin ALD-Al 2 O 3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE

Banal, Ryan G., Imura, Masataka, Tsuya, Daiju, Iwai, Hideo, Koide, Yasuo

Journal:

physica status solidi (a)

Year:

2016

Language:

english

File:

PDF, 1.24 MB

english, 2016

17

High Speed Deposition of Y2O3 Films by Laser-Assisted Chemical Vapor Deposition

Banal, Ryan, Kimura, Teiichi, Goto, Takashi

Journal:

MATERIALS TRANSACTIONS

Year:

2005

Language:

english

File:

PDF, 137 KB

english, 2005

18

Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al 2 O 3 bilayer gate materials for H-terminated diamond field effect transistors

Banal, Ryan G., Imura, Masataka, Liu, Jiangwei, Koide, Yasuo

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.41 MB

english, 2016

19

Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel

Imura, Masataka, Banal, Ryan G., Liao, Meiyong, Liu, Jiangwei, Aizawa, Takashi, Tanaka, Akihiro, Iwai, Hideo, Mano, Takaaki, Koide, Yasuo

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.31 MB

english, 2017

20

Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy

Imura, Masataka, Tsuda, Shunsuke, Nagata, Takahiro, Banal, Ryan G., Yoshikawa, Hideki, Yang, AnLi, Yamashita, Yoshiyuki, Kobayashi, Keisuke, Koide, Yasuo, Yamaguchi, Tomohiro, Kaneko, Masamitsu, Uemat

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1007 KB

english, 2017

21

Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al 2 O 3 Stack Gate

Banal, Ryan G., Imura, Masataka, Ohata, Hirohito, Liao, Meiyong, Liu, Jiangwei, Koide, Yasuo

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.02 MB

english, 2017

22

Surface and bulk electronic structures of unintentionally and Mg-doped In 0.7 Ga 0.3 N epilayer by hard X-ray photoelectron spectroscopy

Imura, Masataka, Tsuda, Shunsuke, Takeda, Hiroyuki, Nagata, Takahiro, Banal, Ryan G., Yoshikawa, Hideki, Yang, AnLi, Yamashita, Yoshiyuki, Kobayashi, Keisuke, Koide, Yasuo, Yamaguchi, Tomohiro, Kaneko

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.39 MB

english, 2018

23

Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy

Imura, Masataka, Ota, Yuichi, Banal, Ryan G., Liao, Meiyong, Nakayama, Yoshiko, Takeguchi, Masaki, Koide, Yasuo

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 2.85 MB

english, 2018